View BLS2731-110_292311.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D260
BLS2731-110 Microwave power transistor
Product specification Supersedes data of 1998 Jan 30 2001 Dec 05
Philips Semiconductors
Product specification
Microwave power transistor
FEATURES * Suitable for short and medium pulse applications * Internal input and output matching networks for an easy circuit design * Emitter ballasting resistors improve ruggedness * Gold metallization ensures excellent reliability * Interdigitated emitter-base structure provides high emitter efficiency * Multicell geometry improves power sharing and reduces thermal resistance.
dbook, halfpage
BLS2731-110
PINNING - SOT423A PIN 1 2 3 emitter base; connected to flange DESCRIPTION collector
1
APPLICATIONS * Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT423A) with the common base connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 C in a common base class-C test circuit. MODE OF OPERATION Pulsed class-C f (GHz) 2.7 to 3.1 VCB (V) 40 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PL (W) >110 Gp (dB) >7 C (%) >35
3 2 3
MBK052
Fig.1 Simplified outline.
2001 Dec 05
2
Philips Semiconductors
Product specification
Microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCES VEBO ICM Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage peak collector current total power dissipation storage temperature operating junction temperature soldering temperature up to 0.2 mm from ceramic cap; t 10 s RBE = 0 open collector tp 100 s; 10% CONDITIONS open emitter - - - - -65 - -
BLS2731-110
MIN.
MAX. 75 75 2 12 500 +200 200 235
UNIT V V V A W C C C
tp = 100 s; = 10%; Tmb = 25 C -
THERMAL CHARACTERISTICS SYMBOL Zth j-h Note 1. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES ICBO ICES IEBO hFE PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage collector leakage current collector leakage current emitter leakage current DC current gain CONDITIONS IC = 30 mA; open emitter IC = 30 mA; VBE = 0 VCB = 40 V; IE = 0 VCE = 40 V; VBE = 0 VEB = 1.5 V; IC = 0 VCE = 5 V; IC = 3 A MIN. 75 75 - - - 40 MAX. - - 3 6 0.6 100 UNIT V V mA mA mA PARAMETER thermal impedance from junction to heatsink CONDITIONS tp = 100 s; = 10%; note 1 VALUE 0.24 UNIT K/W
APPLICATION INFORMATION RF performance at Th = 25 C in a common base test circuit. MODE OF OPERATION f (GHz) 2.7 to 3.1 Class-C; tp = 100 s; = 10% 2.7 to 2.9 2.9 to 3.1 VCE (V) 40 40 40 PL (W) 110 typ. 130 typ. 120 GP (dB) 7 typ. 8 typ. 7.5 C (%) 35 typ. 42 typ. 40
2001 Dec 05
3
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
handbook, halfpage
10
MBK284
Gp (dB) 8
C Gp
50 C (%) 40
PL handbook, halfpage (W) 120 100 2.9 GHz
140
MBK285
2.7 3.1
6
30
80 60 40
4
20
2
10 20
0 2.7
2.8
2.9
3
f (GHz)
0 3.1
0 10
12
14
16
18
PD (W)
20
VCE = 40 V; class-C; tp = 100 s; = 10%.
VCE = 40 V; class-C; tp = 100 s; = 10%.
Fig.2
Power gain and efficiency as functions of frequency; typical values.
Fig.3
Load power as a function of drive power; typical values.
MGM538
handbook, halfpage
12
handbook, halfpage
8
MGM539
Zi ()
xi
ZL () 4
RL
8
0 ri -4 XL
4
0 2.6
2.8
3
f (GHz)
3.2
-8 2.6
2.8
3
f (GHz)
3.2
VCB = 40 V; class-C; PL = 110 W.
VCB = 40 V; class-C; PL = 110 W.
Fig.4
Input impedance as function of frequency (series components); typical values.
Fig.5
Load impedance as function of frequency (series components); typical values.
2001 Dec 05
4
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
handbook, full pagewidth
30
30
40
L8 L2 L4 L6 input L13 L5 L12 L14 L3 L1 L7 L10 L9 C1 output L11 C2 RC
MGM540
Dimensions in mm. The components are located on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.
2001 Dec 05
5
Philips Semiconductors
Product specification
Microwave power transistor
List of components (see Fig.6) COMPONENT C1 C2 RC L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 L12 L13 L14 DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor in series with SMD resistor stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 VALUE 12 pF 18 pF 100 nF + 5
BLS2731-110
DIMENSIONS
length 4.5 mm width 10 mm length 2.5 mm width 16.4 mm length 8.3 mm width 1 mm length 8 mm width 1.5 mm length 2 mm width 8.9 mm length 12.7 mm width 1.2 mm length 4.5 mm width 10 mm length 2.5 mm width 24.4 mm length 4.4 mm width 1 mm length 5.2 mm width 1 mm length 9.3 mm width 1 mm length 2.5 mm width 6 mm length 7.8 mm width 1.2 mm length 7.5 mm width 1.2 mm
Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on double-clad printed-circuit board with Duroid dielectric (r = 2.2); thickness = 0.38 mm.
2001 Dec 05
6
Philips Semiconductors
Product specification
Microwave power transistor
PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads
BLS2731-110
SOT423A
D
A F 3 D1
U1 q 1 C
B c
H
U2
p
E1 w1 M A M B M
E
A 2 b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.72 4.90 0.225 0.193 b 9.53 9.27 0.375 0.365 c 0.10 0.05 0.004 0.002 D 12.09 11.71 0.476 0.461 D1 12.83 12.57 0.505 0.495 E 8.84 8.56 0.348 0.337 E1 10.29 10.03 0.405 0.395 F 1.58 1.47 0.062 0.058 H 19.81 18.29 0.78 0.72 p 3.43 3.18 0.135 0.125 Q 3.35 2.95 0.132 0.116 q 16.51 0.65 U1 22.99 22.73 0.905 0.895 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.76 0.03
OUTLINE VERSION SOT423A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-03-29
2001 Dec 05
7
Philips Semiconductors
Product specification
Microwave power transistor
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BLS2731-110
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2001 Dec 05
8
Philips Semiconductors
Product specification
Microwave power transistor
NOTES
BLS2731-110
2001 Dec 05
9
Philips Semiconductors
Product specification
Microwave power transistor
NOTES
BLS2731-110
2001 Dec 05
10
Philips Semiconductors
Product specification
Microwave power transistor
NOTES
BLS2731-110
2001 Dec 05
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/05/pp12
Date of release: 2001
Dec 05
Document order number:
9397 750 09083

▲Up To Search▲

Price & Availability of BLS2731-110

	To Download BLS2731-110 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .